* 9A, 200V, RDS(on)(Max 0.4Ω)@VGS=10V
* Ultra-low Gate Charge(Typical 43nC)
* Fast Switching Capability
* 100%Avalanche Tested
* Maximum Junction Temp.

such as automotive, high efficiency switching for DC/DC converters, and DC motor control. G D S TO220 Absolute Maximum.

This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well s.

WFP10N60

WFP10N65

WFP12N60

WFP12N65

WFP13N50

WFP13N50C

WFP18N20

WFP18N50

WFP2N60

WFP2N60B

WFP3205

WFP3205T

WFP4N60